In applications such as robotics, drones, and low-voltage high-power servo drives, high-efficiency and high-power density motor drive solutions have always been the core demand in system design. As the demand for low-voltage high power continues to rise, traditional silicon-based devices are gradually approaching their limits in terms of switching frequency, conduction loss, and temperature rise, making it difficult to achieve a better balance between size, efficiency, and heat dissipation.
InnoSic has launched the low-voltage GaN motor drive solution INNDMD72V200A1:
By paralleling multiple InnoGaN devices and collaboratively designing a self-developed driver IC, it achieves up to 200 A phase current capability under 48–72V low-voltage bus conditions, with complete public verification for high-power servo systems targeting applications such as robotic joints, drone propulsion, and industrial servos.
Low Voltage GaN HEMT + FOC Control Platform
The INNDMD72V200A1 solution is based on InnoSic’s low-voltage GaN HEMT technology, adopting a modular design approach of “driver IC + GaN discrete devices” to complete device performance verification and system-level motor testing on the same platform.
The key features of the solution include:
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Using the InnoGaN INN100EBD018EAD as the power switching device in a 4-device parallel structure
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The driver section uses InnoSic’s self-developed driver chip INS2040QC
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The control board integrates a FOC sensorless algorithm (FOC sensorless) and supports low-side current sampling, allowing direct connection to the motor for real-time testing and performance verification
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Under the multi-device parallel structure, the losses and thermal performance of the GaN devices are systematically verified, providing data support for subsequent implementation of the solution
Core Parameters and System Structure
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Board Size: 185 × 100 × 28 mm
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Device Configuration:
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Driver IC: INS2040QC × 3
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GaN discrete devices INN100EBD018EAD × 24
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Input Voltage Range: 48 Vdc – 72 Vdc
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Sustainable Output Phase Current (RMS): 200 A Max
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Topology: Three-phase inverter circuit
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Control Method: FOC sensorless algorithm + low-side current sampling
The solution adopts a standard three-phase inverter topology, forming high current channels for each phase bridge arm by paralleling multiple GaN devices, and the system block diagram illustrates the overall architecture relationship between the driver IC, power devices, and control board, facilitating developers’ understanding of signal flow and power flow distribution from a system perspective.
Under the premise of compact size, it achieves 72 V bus and 200 A level phase current output, providing a high power density foundation for low-voltage high current servo drives.
Load Capacity and Measured Performance under Heat Dissipation Conditions
InnoSic has conducted systematic testing of the INNDMD72V200A1 under different bus voltages and heat dissipation conditions, providing key data, waveforms, temperature rise, and other measured results.
Under natural cooling conditions:
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72 V Bus + Natural Cooling: Maximum phase current 90.8 Arms
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48 V Bus + Natural Cooling: Maximum phase current 96.2 Arms
Under enhanced forced air cooling conditions:
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72 V Bus + 5 m/s Air Cooling: Maximum phase current 203.7 Arms
In actual testing, the solution was evaluated under both 48 V and 72 V bus conditions using two types of cooling methods: “heat sink + no fan” and “heat sink + 5 m/s air cooling”. The original text provides a schematic of the motor testing system and data curves under corresponding conditions, covering current, losses, and thermal performance, providing direct reference for users in system design and thermal management assessment in different application environments.
With reasonable heat dissipation capability ensured, the solution significantly improves the phase current capacity per unit volume, thereby enhancing overall power density, making it suitable for motor drive systems with high requirements for size and efficiency.
Circuit Layout and Testing Platform Design Points
The INNDMD72V200A1 adopts a “self-developed driver IC + GaN device” 4-device parallel structure, specifically optimizing the driver loop and power loop to leverage the characteristics of GaN devices in high frequency and low loss.
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The driver loop is designed to address the high switching speed characteristics of GaN, reducing the impact of parasitic parameters
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The power loop balances current sharing and switching consistency under the parallel structure
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The overall board layout considers both heat dissipation paths and current paths, and has been validated with different cooling methods (natural cooling, air cooling).
Regarding the control board, the solution integrates a FOC sensorless algorithm and supports low-side current sampling. Users can directly connect to the target motor, completing start-stop, speed adjustment, and operating condition switching tests on this platform, achieving integrated verification from devices, drivers to algorithms, significantly shortening the development and debugging cycle of motor drive systems.
Adaptation for Various Low Voltage High Power Scenarios
InnoSic’s INNDMD72V200A1 solution targets typical application areas:
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Robotic joint drives
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Drone propulsion systems
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Low voltage high power servo motors
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Industrial automation equipment
These application scenarios generally share common demands for “low voltage, high current, high power density, and size constraints”, with high requirements for drive efficiency and thermal management. It provides a system-level GaN drive reference solution for applications such as robotics, drones, and low-voltage servos.
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