16nm FinFET AI Chip Tape-Out Summary

16nm FinFET AI Chip Tape-Out Summary

This project began around the same time last year, and after a year of “process flow”, we finally received the PDK and digital library 20 days before tape-out. One cannot help but marvel at the efficiency of the team. It took a week to familiarize myself with the process, and the tape-out design was completed … Read more

Advancements in GaN Technology II: The First 100nm High-Performance GaN Wafer PDK Platform in China

Advancements in GaN Technology II: The First 100nm High-Performance GaN Wafer PDK Platform in China

Jiufengshan Laboratory GaN PDK R&D Team Jiufengshan Laboratory GaN Series Achievements II Recently, Jiufengshan Laboratory released the first 100 nm silicon-based GaN commercial Process Design Kit (PDK) in China, with performance indicators reaching domestic leading and international top levels. As the second commercial solution globally and the first in China, its technical specifications support high-throughput … Read more