This handbook focuses on the core materials and devices of TFT-LCD display panels, organized by functional modules. It covers terminology definitions, core parameters, application scenarios, and production considerations, suitable for technical communication, production practices, and supplier interactions in the display panel module industry. It can serve as a quick reference tool for technical personnel, production staff, and cross-departmental collaborators.
1. Core Semiconductor Materials for TFT Backplanes (Determining Display Performance)
| Term | Chinese Name | Core Definition | Key Parameters | Application Scenarios | Production / Selection Considerations |
|---|---|---|---|---|---|
| a-Si | Amorphous Silicon | The most commonly used semiconductor material for TFT channel layers, with mature processes. | Electron mobility: 0.3~1 cm²/V.s | Mid to low-end display panels, G8.5 and above high-generation lines | Low cost, high yield, not suitable for high-resolution / high refresh rate products |
| IGZO | Indium Gallium Zinc Oxide | High mobility semiconductor material, patented technology by Sharp. | Electron mobility: 10~25 cm²/V.s | Mid to high-end high brightness, high resolution, high refresh panels | Fast charge and discharge rates, suitable for large monitors and mid to high-end notebooks |
| LTPS | Low-Temperature Polycrystalline Silicon | Polycrystalline silicon material formed by crystallizing a-Si at < 600°C. | Electron mobility: >100 cm²/V.s | High-end high PPI, high refresh panels, <g6.0 generation="" lines | Complex processes, high costs, suitable for flagship notebooks and gaming monitors |
| LTPO | Low-Temperature Polycrystalline Oxide | A composite material combining LTPS and IGZO. | High mobility + low leakage current | High-end AMOLED products, high-end low-power notebooks | Supports 1Hz low refresh rate to reduce power consumption, balancing high performance and battery life |
2. Core Materials for CF Color Film Substrates (Affecting Color and Transmittance)
| Term | Chinese Name | Core Definition | Core Function | Application Scenarios | Production / Selection Considerations |
|---|---|---|---|---|---|
| RGB CR | RGB Color Resistance | Core material of CF substrate, composed of R, G, B three primary colors. | Provides chromaticity and transmittance for color display. | All color TFT-LCD panels | Must align precisely with BM to avoid color mixing. |
| BM | Black Matrix | Light-blocking material in CF substrate. | Blocks subpixel leakage light, improves contrast, and prevents color mixing. | All TFT-LCD panels | Must control light-blocking rate to avoid blocking effective display areas. |
| OC | Flat Layer | Acrylic resin material (thermosetting / photohardening type). | Protects color resistance layer, achieving film surface flattening. | Essential for IPS mode panels; can be omitted in VA/TN mode. | IPS has no ITO electrode protection, OC must ensure uniform box thickness. |
3. Core Components of the Liquid Crystal Box (Ensuring Display Stability)
| Term | Chinese Name | Core Definition | Core Function | Type / Characteristics | Production / Selection Considerations |
|---|---|---|---|---|---|
| PI | Polyimide / Alignment Film | Functional film coated on the inner side of the substrate. | Anchors liquid crystal molecules, aligning them at a pre-tilt angle. | Divided into TFT side and CF side alignment films. | Coating uniformity affects viewing angle and display uniformity. |
| PS | Columnar Spacer | Support structure formed by photolithography. | Supports the glass substrate, ensuring uniform cell box thickness. | MPS (Main PS) + SPS (Auxiliary PS) | Height tolerance must be strictly controlled to avoid uneven box thickness. |
| MPS | Main PS | Columnar structure made of elastic resin material. | Core support function, ensuring box thickness stability. | Works in conjunction with SPS. | Must have sufficient compressive strength to prevent substrate deformation. |
| SPS | Auxiliary PS | Auxiliary columnar spacer. | Enhances resistance to extrusion, resisting external deformation. | Distributed in conjunction with MPS. | Distribution density must be reasonable to avoid affecting light transmittance. |
| GF Spacer | Glass Fiber Spacer | Fibrous material doped in the sealing adhesive. | Maintains box thickness around the cell. | Used only in the box body peripheral area. | Must be compatible with sealing adhesive to avoid affecting sealing performance. |
| LC | Liquid Crystal | Intermediate state crystal between liquid and solid. | Regulates light transmittance to achieve image display. | Combines fluidity and anisotropy. | Control working temperature (avoid below crystallization temperature or above clearing point). |
| Sealant | Frame Adhesive | Functional adhesive used for sealing and bonding. | Seals liquid crystal, bonds substrates, maintains peripheral box thickness. | Main Sealant + Dummy Sealant | Must check sealing performance to prevent liquid crystal leakage and moisture intrusion. |
| Main Sealant | Main Frame Adhesive | Core sealing adhesive around the panel. | Main sealing and bonding function. | Single circle coated on the panel edge. | Coating width and thickness must be precisely controlled. |
| Dummy Sealant | Redundant Frame Adhesive | Auxiliary sealing adhesive around large glass panels. | Provides mechanical balance during cutting, protecting the main adhesive. | Exists only during the large panel cutting stage. | Must maintain process consistency with the main adhesive. |
4. Electrode and Circuit Materials (Core of Signal Transmission)
| Term | Chinese Name | Core Definition | Application Position | Core Function | Production / Selection Considerations |
|---|---|---|---|---|---|
| ITO | Indium Tin Oxide | Transparent conductive oxide film. | Pixel electrodes, common electrodes, bonding pads. | Transparent conductivity, transmitting electrical signals. | Must ensure a balance between light transmittance and conductivity. |
| ATO | Antimony-Doped Tin Oxide | High-resistance transparent conductive film. | On the surface of Incell project CF glass. | Resists touch signal interference, conducts static electricity. | Only suitable for Incell touch solutions. |
| MO/AL/MO | Molybdenum-Aluminum-Molybdenum | Composite metal material. | Source/Drain/Gate electrodes. | Transmits current, controls TFT switching. | Commonly used in AL processes, must pay attention to metal layer adhesion. |
| MoTi/CU | Molybdenum-Titanium-Copper | Composite metal material. | Source/Drain/Gate electrodes. | Low resistance, high reliability. | Commonly used in CU processes, must control etching process precision. |
| n+ a-Si | Doped n+ Amorphous Silicon | Doped amorphous silicon film. | Between Source/Drain and semiconductor layer. | Reduces contact resistance, optimizes carrier transmission. | Must control doping concentration to avoid affecting semiconductor performance. |
| Gate | Gate Electrode | Control electrode of TFT. | Gate position of TFT device. | Applies voltage to control channel conductivity, switches pixels. | Must closely cooperate with G-SiNx insulation layer to avoid short circuits. |
| SD | Source Electrode / Drain Electrode | Input / output electrodes of TFT. | Source and drain ends of TFT device. | Source inputs current, Drain outputs current to pixel electrodes. | Must precisely connect with n+ a-Si ohmic contact layer. |
5. Key Structures and Process Materials (Supporting Production and Display Effects)
| Term | Chinese Name | Core Definition | Core Function | Related Processes | Production / Selection Considerations |
|---|---|---|---|---|---|
| PR | Photoresist | Photosensitive functional material. | Achieves pattern transfer in photolithography. | Photolithography step in Array/CF substrate manufacturing. | Must match UV exposure dose and development time. |
| SiNx | Silicon Nitride | Dense film material. | Barrier layer, protective layer, insulation layer. | Thin film deposition process. | Must control film density to avoid impurity diffusion. |
| G-SiNx | Gate Insulation Layer | Silicon nitride film covering the Gate electrode. | Insulation isolation, protects gate electrode. | Gate preparation process. | Must ensure insulation performance to prevent leakage. |
| PA-SiNx | Insulation Protection Layer / Passivation Layer | Silicon nitride film covering Source/Drain electrodes. | Insulation and protection function. | Source and drain electrode preparation process. | Must avoid film cracking, affecting device reliability. |
| Clc | Liquid Crystal Capacitor | Core component of pixel load capacitor. | Realizes electrical to optical signal conversion. | Pixel structure design. | Capacitance around 0.1pF, must be used in conjunction with Cst. |
| Cst | Storage Capacitor | Auxiliary capacitor supplementing liquid crystal capacitor. | Maintains pixel voltage stability until the next refresh. | Pixel structure design. | Capacitance around 0.5pF, must match with Clc. |
6. Quick Reference Index (Quick Retrieval by Function)
1. Performance-Related Terms
- High resolution / high refresh adaptation: IGZO, LTPS, LTPO
- Low power adaptation: LTPO, a-Si (mid to low-end)
- Color and transmittance: RGB CR, BM, OC, ITO
2. Production Process-Related Terms
- Photolithography process: PR, PS, RGB CR, BM
- Thin film process: SiNx, G-SiNx, PA-SiNx, n+ a-Si
- Packaging process: Sealant, Main Sealant, Dummy Sealant, GF Spacer
3. Quality Control-Related Terms
- Light leakage control: BM, PS, Sealant
- Box thickness uniformity: PS (MPS/SPS), GF Spacer, OC
- Voltage stability: Clc, Cst, Gate, SD
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