As a leading supplier of advanced semiconductor solutions, Renesas Electronics has launched three new high-voltage 650V GaN FETs for AI data centers and server power systems, including a new 800V HVDC architecture, electric vehicle charging, UPS battery backup equipment, battery storage, and solar inverters. These fourth-generation Plus (Gen IV Plus) devices are designed for multi-kilowatt applications, combining efficient GaN technology with silicon-compatible gate drive inputs to significantly reduce switching power losses while retaining the simplicity of silicon FETs. These devices offer TOLT, TO-247, and TOLL package options, allowing engineers to flexibly customize their thermal management and PCB designs for specific power architectures.
The new TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS devices leverage the powerful SuperGaN® platform, a field-proven depletion-mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas Electronics in June 2024. These devices are based on low-loss d-mode technology, offering superior efficiency compared to silicon, silicon carbide (SiC), and other GaN products. Additionally, they minimize power losses through lower gate charge, output capacitance, crossover losses, and dynamic resistance effects, as well as a higher 4V threshold voltage that is unattainable by today’s enhancement-mode (e-mode) GaN devices.
The new Gen IV Plus products are built on chips that are 14% smaller than the previous Gen IV platform, achieving a low RDS(on) of 30 milliohms, reducing on-resistance by 14%, and improving the figure of merit (FOM) of the on-resistance times output capacitance by 20%. The smaller chip size reduces system costs and output capacitance, thereby enhancing efficiency and power density. These advantages make Gen IV Plus devices ideal for cost-sensitive applications with high thermal requirements, where high performance, efficiency, and small size are critical. They are fully compatible with existing designs, facilitating upgrades while preserving existing engineering investments.
They come in compact TOLT, TO-247, and TOLL packages, providing one of the widest package options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher when paralleled. The new surface-mount packages include bottom (TOLL) and top (TOLT) thermal paths, suitable for cooler case temperatures, making it easier to achieve device paralleling when higher conduction currents are required. Additionally, the commonly used TO-247 package offers customers higher thermal capability for greater power.
“The launch of the Gen IV Plus GaN devices marks the first major new product milestone for Renesas Electronics since acquiring Transphorm last year,” said Primit Parikh, Vice President of Renesas Electronics’ GaN Division. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to provide complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path for designing products with higher power density, smaller size, and greater efficiency, as well as lower total system costs.
Unique d-mode normally-off design, high reliability, easy integration
Like previous d-type GaN products, Renesas Electronics’ new devices utilize integrated low-voltage silicon MOSFETs, a unique configuration that enables seamless normally-off operation while fully leveraging the low-loss, high-efficiency switching advantages of high-voltage GaN. By using silicon FETs for the input stage, SuperGaN FETs can be easily driven by standard off-the-shelf gate drivers, rather than requiring the specialized drivers typically needed for e-mode GaN. This compatibility simplifies design and lowers the barrier for system developers to adopt GaN.
Driven by the demand for electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion, GaN-based switching devices are rapidly evolving into a key technology for the next generation of power semiconductors. They offer superior efficiency, higher switching frequencies, and smaller footprints compared to SiC and silicon-based semiconductor switching devices.
Renesas Electronics has a unique advantage in the GaN market with its comprehensive solutions, offering both high-power and low-power GaN FETs, unlike many suppliers whose success in this field is primarily limited to low-power devices. This diverse product portfolio enables Renesas to meet a wider range of applications and customer needs. To date, Renesas Electronics has delivered over 20 million GaN devices for high-power and low-power applications, equivalent to over 30 billion hours of field usage.
Recommended Reading