According to a report by Electronic Enthusiasts (Author: Wu Zipeng), with the rapid development of applications in artificial intelligence, data centers, automotive electronics, and consumer electronics, third-generation semiconductors—GaN (Gallium Nitride)—are experiencing unprecedented growth opportunities. According to statistics from TrendForce, the global GaN power device market is expected to reach $485 million in 2024 and $4.376 billion by 2030, with a compound annual growth rate (CAGR) of 49% during this period.Initially, GaN devices were mainly used in low-power applications such as smartphone fast-charging adapters and LED lighting drivers. With innovations in material processes and device architectures, GaN devices are breaking through power limitations and entering the mid-to-high power domain.Recently, global semiconductor solutions provider Renesas Electronics announced the launch of three new high-voltage 650V GaN FETs—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—suitable for applications in AI data centers and server power supplies (including the new 800V high-voltage DC architecture), electric vehicle charging, uninterruptible power supply battery backup devices, battery storage, and solar inverters.Kenny Yim, Senior Director of GaN/Power at Renesas, stated: “Renesas Electronics’ D-MODE GaN devices have always been aimed at high-power applications, utilizing Renesas’ proprietary D-MODE GaN patent technology. The newly released fourth-generation products (also known as Gen IV Plus) are designed for multi-kilowatt applications, helping customers further enhance system efficiency and power density.”
The Battle Between D-MODE and E-MODE
From the perspective of gate technology, GaN power devices are mainly divided into two technical routes: enhanced E-Mode and depletion-mode D-Mode.D-Mode GaN devices are normally-off devices that achieve built-in negative bias by introducing a p-GaN layer beneath the gate, allowing for 0V turn-off and positive voltage turn-on. In terms of application, due to the normally-off characteristics of E-Mode GaN, its usage can refer to traditional silicon MOSFETs, but requires careful design of peripheral circuits or the use of dedicated driver ICs to address issues such as high dv/dt interference.D-Mode GaN devices are normally-on devices, where a two-dimensional electron gas (2DEG) channel is naturally formed based on AlGaN/GaN heterojunctions, requiring negative gate voltage for turn-off. D-Mode offers higher current density and lower on-resistance, meaning that power semiconductor devices designed with D-Mode are smaller and more efficient for the same power output.Currently, E-Mode GaN devices are widely adopted in low-power applications, and their costs have approached those of traditional silicon devices, offering a high cost-performance ratio. However, Kenny Yim pointed out that E-Mode GaN devices still have some prominent drawbacks in high-power applications. For example, E-MODE’s vGs gate voltage is relatively low, typically only 1V, with a maximum of only 5-6V; E-MODE has dynamic resistance issues, where its Rds(on) changes rapidly in practical use, affecting reliability and performance in high-power scenarios; E-MODE cannot use conventional industrial packages like TO247 and TO220, otherwise it may lead to false turn-on issues; additionally, when used as a diode, E-MODE has a significant reverse conduction voltage drop, resulting in higher power loss. D-Mode GaN devices do not face these issues in high-power scenarios.Kenny Yim emphasized: “In D-Mode GaN devices, the key technology—using MOSFETs to control D-MODE GaN—is a proprietary technology unique to Renesas Electronics. It is expected that only Renesas will be able to provide such patented technology in the next 20 years.”It is reported that Renesas Electronics’ research and development of D-Mode GaN devices covers the entire process from epitaxy to packaging, and can also assist customers in achieving ideal solution designs. The Gen IV Plus products are 14% smaller than the previous generation Gen IV platform die, achieving a lower on-resistance (RDS(on)) of 30 mΩ, a 14% reduction compared to previous products, and a 20% improvement in the figure of merit (FOM) of the product, which is the product of on-resistance and output capacitance. The product has standard product validation and has begun automotive-grade validation, making Renesas the only company capable of producing automotive-grade GaN devices.
Completely Optimized New Gen IV Plus Products
Based on the Gen IV Plus platform, Renesas Electronics has launched three new high-voltage 650V GaN FETs—TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS—offering TOLT, TO-247, and TOLL packaging options, allowing engineers to flexibly customize thermal management and circuit board design for specific power architectures.The three new products on the Gen IV Plus platform feature excellent product characteristics. For example, the TP65H030G4PRS is a 30mOhm, 650V GaN device in a TOLT package, utilizing JEDEC-compliant GaN technology and verified for low dynamic resistance Dynamic RDS(on)eff. This device has zero reverse recovery charge, which reduces frequency losses and achieves higher efficiency in hard-switching and soft-switching circuits, thereby increasing power density, reducing system size and weight, and overall lowering system costs. Therefore, the TP65H030G4PRS can provide excellent performance and cost-effectiveness for applications such as AI data centers, telecom power supplies, electric vehicle charging, photovoltaic inverters, and uninterruptible power supplies (UPS) and battery energy storage systems (BESS).The three new products on the Gen IV Plus platform also feature ingenious packaging technology, utilizing compact TOLT, TO-247, and TOLL packages, providing a wide range of packaging options for power systems from 1kW to 10kW, meeting both thermal performance and layout optimization requirements, and allowing for parallel configurations to form higher power power systems. The new surface-mount packages include bottom cooling paths (TOLL) and top cooling paths (TOLT), which help reduce case temperatures and facilitate device paralleling when higher conduction currents are required. Additionally, the commonly used TO-247 package offers customers higher thermal capacity for achieving higher power.Kenny Yim stated that Renesas Electronics also provides comprehensive technical support for the new products on the Gen IV Plus platform, offering a full range of GaN FET solutions covering both high-power and low-power applications, which contrasts sharply with many other manufacturers that have only succeeded in the low-power segment. The rich product portfolio enables Renesas Electronics to meet a wider range of application needs and customer groups. He cited typical servers, digital storage, and AC-DC power supplies in communications as examples, where Renesas’ GaN devices can help users achieve totem pole PFC after AC input; in the AC-DC section, whether it is half-bridge, LLC, or full-bridge, D-MODE GaN devices have significant performance advantages, enabling the creation of high-performance MOSFETs; in synchronous rectification, Renesas will also launch low-voltage GaN devices, including GaN for synchronous rectification from 65V to 150V.As of now, Renesas Electronics has shipped over 20 million GaN devices for high and low power applications, with a cumulative operating time exceeding 30 billion hours.
Disclaimer: This article is originally from Electronic Enthusiasts, please indicate the source above when reprinting. For group communication, please add WeChat elecfans999, for submission and interview requests, please send an email to [email protected].
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