IEDM 2025 Image Sensor Paper Sharing
Click the blue “Osmart” above to follow this account for a professional perspective. 8-1 A 10-micron pitch Ge-on-Si SPAD pixel array achieves a photoelectric conversion efficiency of 33.8% at a wavelength of 1300 nm and 23.3% at 1550 nm in a room temperature environment. Sony Semiconductor This paper presents a 10μm pitch back-illuminated Ge-on-Si SPAD … Read more