IEDM 2025 Image Sensor Paper Sharing

IEDM 2025 Image Sensor Paper Sharing

Click the blue “Osmart” above to follow this account for a professional perspective. 8-1 A 10-micron pitch Ge-on-Si SPAD pixel array achieves a photoelectric conversion efficiency of 33.8% at a wavelength of 1300 nm and 23.3% at 1550 nm in a room temperature environment. Sony Semiconductor This paper presents a 10μm pitch back-illuminated Ge-on-Si SPAD … Read more

Application Solutions for Everlight Skin Sensors

Application Solutions for Everlight Skin Sensors

The optical skin sensor can distinguish between skin and the surfaces of different objects, and is widely used in wireless headphones, smartwatches, and other wearable devices. For example, in the case of TWS wireless Bluetooth headphones, the optical skin sensor only plays music when the user is wearing the headphones. When the user removes the … Read more

Asymmetric Schottky Junction Design Achieves Bidirectional, Low-Power Geiger Mode Avalanche Diode

Asymmetric Schottky Junction Design Achieves Bidirectional, Low-Power Geiger Mode Avalanche Diode

Abstract A research team from Fudan University, East China Normal University, and the Shanghai Institute of Technical Physics, Chinese Academy of Sciences, has designed and fabricated a novel avalanche photodiode (APD) based on a graphene/indium selenide (InSe)/chromium (Cr) asymmetric Schottky junction. This device innovatively realizes the phenomenon of “bidirectional Geiger mode avalanche,” which can occur … Read more