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π₯ Content Introduction
1. Research Background and Significance
Gallium Nitride (GaN), as a third-generation wide bandgap semiconductor material, possesses excellent properties such as a large bandgap (3.4 eV), high electron mobility, high-temperature resistance, and radiation resistance, making it widely used in high-frequency power devices (such as 5G base station power amplifiers), ultraviolet detectors, and light-emitting diodes (LEDs). However, during the preparation and device processing of GaN materials, hydrogen can easily be introduced into the lattice through ion implantation, chemical vapor deposition (CVD), and other processes. The diffusion behavior of hydrogen atoms in the GaN lattice can significantly affect the performance of materials and devices: on one hand, hydrogen can passivate defects in GaN (such as vacancies and dislocations), reducing the density of defect states and improving the electrical performance of devices; on the other hand, rapid diffusion of hydrogen in high-temperature environments may lead to reactivation of defects, causing reliability issues such as threshold voltage drift and increased leakage current.
Temperature is a key factor affecting hydrogen diffusion in the latticeβan increase in temperature enhances the thermal motion energy of hydrogen atoms, increasing their probability of overcoming diffusion barriers, thereby altering the diffusion coefficient and diffusion path. Therefore, simulating the diffusion behavior of hydrogen in the GaN lattice at different temperatures reveals the influence of temperature on diffusion mechanisms and rates, which is of significant theoretical and engineering importance for optimizing GaN device fabrication processes (such as controlling hydrogen passivation temperature) and enhancing device high-temperature stability.

β³οΈ Simulation Results


π£ Sample Code
hdif = (1/deltax)^2*(hconc(i-1)+hconc(i+1)-2*hconc(i));
fermi = 1/(deltax)^2*((hconc(i)+hconc(i+1))/2*(Ef(i+1)-Ef(i))/(k*T)…
– (hconc(i-1)+hconc(i))/2*(Ef(i)-Ef(i-1))/(k*T));
forces(i,2) = hdif;
forces(i,3) = fermi;
if i == floor(chargedepth/deltax)
fermi = 0;
end
deltaH = Dh*(hdif + fermi);
hconc(i) = hconc(i) + deltaH;
forces(i,1) = deltaH;
π References
π Some theoretical references are from online literature; please contact the author for removal if there is any infringement.
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