Currently, 3D NAND technology is rapidly advancing, with multiple manufacturers accelerating the development of stacking technologies exceeding 300 layers.
On February 20, Kioxia Holdings announced the development of the 10th generation BiCS 3D NAND flash memory in collaboration with SanDisk, achieving new heights in stacking layers, storage density, and interface speed performance.
Reportedly, Kioxia’s new flash memory utilizes CBA (Chip-By-Chip) bonding technology, manufacturing CMOS control circuits and NAND storage arrays separately before bonding them together, similar to Yangtze Memory Technologies’ Xtacking architecture.
In terms of stacking layers, Kioxia’s 10th generation BiCS FLASH™ 3D NAND flash memory reaches 332 layers, which is an increase of up to 38% compared to the 218 layers of the 8th generation, surpassing SK Hynix’s 321 layers, Samsung’s 290 layers, Micron’s 276 layers, and Western Digital’s 218 layers.
Additionally, the NAND flash memory’s storage density has increased by 59%, approximately 36.4Gb per square millimeter, significantly ahead of competitors, with Western Digital achieving only 22.9Gb per square millimeter and SK Hynix at just 20Gb per square millimeter.
Moreover, compared to the current 8th generation products with 218 layers, the new generation 3D flash memory has achieved a 33% increase in NAND interface speed, reaching 4.8Gb/s. This technology also significantly enhances data input/output energy efficiency, reducing input power consumption by 10% and output power consumption by 34%, successfully achieving an optimal balance between high performance and low power consumption.
Kioxia’s Chief Technology Officer, Eiji Tanaka, stated: “With the proliferation of artificial intelligence technology, the amount of data generated is expected to increase significantly, while modern data centers are also demanding improved energy efficiency. Kioxia firmly believes that this new technology will enable products with larger capacity, higher speed, and lower power consumption, including SSD products for future storage solutions, laying the foundation for the development of artificial intelligence.”
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