With the rapid iteration of emerging applications such as the Internet of Things, artificial intelligence, and smart vehicles, the market has raised higher demands for data storage in terms of speed, power consumption, capacity, and reliability. Storage technology is continually facing new challenges. Among the current mainstream storage technologies, while DRAM is fast, it has high power consumption, low capacity, and high costs, and it cannot retain data without power, limiting its usage scenarios; NAND Flash has low read and write speeds, and its storage density is significantly limited by process technology. To break through the limitations of traditional storage like DRAM and NAND Flash, new storage technologies are beginning to enter the public eye.
This report focuses on “ferroelectric memory” technology, which features fast read and write speeds, long lifespan, low power consumption, and high reliability. With numerous characteristics, it is becoming one of the future development directions for storage technology.
Trends in IEEE publications on ferroelectric memory over the past decade. (Click “Read Original” at the end to download the full report for access to historical publication data.)
Data Source: IEEE Xplore, May 2023
Key terms in the field of ferroelectric memory by IEEE.
Data Source: IEEE Xplore, May 2023
Global research status in the field of ferroelectric memory. (Click “Read Original” at the end to download the full report for insights into research status in certain countries.)
Data Source: IEEE Xplore, May 2023
IEEE Transactions on Electron Devices
About This Journal: A monthly publication focusing on research related to the theory, modeling, design, performance, and reliability of electronic and ionic integrated circuits.
Recommended articles related to “ferroelectric memory” in this journal:
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Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application
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Performance Improvement by Modifying Deposition Temperature in HfZrOx Ferroelectric Memory
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A Technology Path for Scaling Embedded FeRAM to 28 nm and Beyond With 2T1C Structure
69th Annual IEEE International Electron Devices Meeting
The 69th IEDM will be held from December 9 to 13, 2023, in San Francisco, USA. The conference will cover technical breakthroughs in the fields of semiconductor and electronic component technology, design, manufacturing, physics, and modeling, primarily focusing on the latest developments in nanoscale CMOS transistor technology, advanced memory, displays, sensors, MEMS components, new quantum and nano components and phenomenology, optoelectronics, power and energy harvesting devices, high-speed devices, process technology, and equipment modeling and simulation.
Recommended papers related to “ferroelectric memory” at this conference:
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FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory
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Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory
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A c-axis aligned crystalline IGZO FET and a 0.06-μm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Semiconductor Microchips and Fabrication: A Practical Guide to Theory and Manufacturing
This book is a newly published e-book in 2023, combining semiconductor theory with practice, showcasing actual devices and processes in a highly visual form, supplemented with illustrations, including device images, manufacturing process diagrams, and structures of semiconductor microchips.
The topics covered include:
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Introduction to basic semiconductor concepts;
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Basic knowledge of semiconductor devices and manufacturing machines;
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Introduction to transistors and integrated circuits;
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Main processes used in microchip manufacturing, including photolithography, metallization, reactive ion etching (RIE), plasma-enhanced chemical vapor deposition (PECVD), thermal oxidation, and ion implantation;
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Process design and troubleshooting techniques, such as designing dry etching recipes;
Copywriting | IEEE Xplore
Editor | Mao Jingjing
Editorial Supervisor | Zhang Yanhua
Reviewer | Zhang Yuanyuan