Ion Beam Etching Machine 20 IBE-C

Shanghai Bordon Japan Imported NS Ion Beam Etching Machine 20 IBE-C, Suitable for medium-scale laboratory research, Capable of etching materials of 3 inches, 4 inches, 6 inches, 8 inches wafers. Utilizes self-developed rotary and planetary transfer mechanism “Dry Chuck Planet”, ensuring a relatively uniform and smooth surface for samples. Etching uniformity ≤±5%. The Ion Beam Etching Machine 20 IBE-C can be optionally equipped with American KRi ion source or endpoint detection(monitoring current gas composition, monitoring the etching process).

Ion Beam Etching Machine 20 IBE-C Basic Parameters

Ion Beam Etching Machine 20 IBE-C Features:1. Dry etching, physical etching, nanometer-level etching precision2. RF angle can be adjusted arbitrarily, etching can be performed vertically, slanted, etc. as needed3. Substrate is directly mounted on the direct cooling device,allowing etching in low-temperature environments.4. Equipped with a rotary and planetary transfer mechanism “Dry Chuck Planet”, ensuring a relatively uniform and smooth surface for samples. Etching uniformity ≤±5%5. Almost all materials can be etched, IBE can be used for reactive ion etching RIE that cannot etch materials well6. Equipped with German Pfeiffer molecular pumpandrotary vane pump7. Custom design, ultra-high freedom: Etching machinedesigned for automated operation processes, very user-friendly production process8. Optional American KRi ion source: Positive ions are extracted from the ion source grid and accelerated, neutral beams impact the sample surface, sputtering to form etching images. Since the plasma generation is far from the wafer space, the glow is not affected by non-volatile byproducts. Shanghai Bordon Ion Beam Etching Machine 20 IBE-C Advantages:Can be used to etch almost any solid material, including metals, alloys, oxides, compounds, composite materials, semiconductors, insulators, etc. The energy and density of the ion beam drawn from the grid can be independently controlled, enhancing process controllability; the angle of the substrate stage can be adjusted to achieve inclined incidence of the ion beam, suitable for etching special patterns and also applicable for sidewall cleaning processes.1. High etching precision, good anisotropy2. Good etching uniformity, high repeatability3. Wide material adaptability4. Strong controllability of etching depthShanghai Bordon Ion Beam Etching Machine20 IBE-C Typical Applications: Can be customized according to customer requirements. Ion beam etching, as a micro-machining process in dry etching technology, is widely used. As it is a physical etching process without accompanying chemical reactions, it is suitable not only for processing difficult-to-etch materials such asAu, Pt, magnetic materials, but also for multi-layer film etching processes formed by multiple metal films.. 1. MEMS Sensor Chip Etching: PT, PZT, Au, Pt, W, Ta (electrode) etc…2. Grating Etching: Preparation of thin film lithium niobate (LN) grating couplers, making shining Roland gratings, AR glasses slanted gratings preparation, GaN grating manufacturing3. Magnetic Devices: Ni-Fe, Ni-Co, TiO2, BST, Co-Fe, Ta, Cu, Ni-Mo, SiO2 etc.…4. Spintronics: Optional endpoint detector, can achieve control of ultra-thin magnetic layer etching.Bordon Company has over 50 years ofion etchingmarket experience, with a large installed base and market-validated etching technology!For more details, contact Ms. Ye from Shanghai Bordon