According to news from Westlake University, Westlake Instrument (Hangzhou) Technology Co., Ltd., incubated by the university, has successfully developed an automated laser peeling technology for 12-inch silicon carbide substrates, solving the challenges of slicing ultra-large 12-inch and larger silicon carbide substrates.
Compared to traditional silicon materials, silicon carbide has a wider bandgap, higher melting point, electron mobility, and thermal conductivity, allowing it to operate stably under high temperature and high voltage conditions. It has become a key material for the iterative upgrade of the new energy and semiconductor industries.
Professor Qiu Min from the School of Engineering at Westlake University introduced that one of the important ways to reduce costs and increase efficiency in the silicon carbide industry is to manufacture larger-sized silicon carbide substrate materials. Compared to 6-inch and 8-inch substrates, the 12-inch silicon carbide substrate material expands the area available for chip manufacturing on a single wafer, significantly increasing chip yield under the same production conditions while reducing the unit manufacturing cost of chips.
“This technology automates the processes of thinning silicon carbide ingots, laser processing, and substrate peeling,” Qiu Min explained. Compared to traditional cutting technologies, the laser peeling process has no material waste, greatly reducing raw material loss. The new technology can significantly shorten the substrate output time, making it suitable for the large-scale production of future ultra-large silicon carbide substrates, further promoting cost reduction and efficiency improvement in the industry.
Source: Science and Technology Daily WeChatEditor: Dai MingReview: Yu HaoEditing: Zhang Meng Proofreading: Shi Menghao (Intern)