Gallium oxide, as a highly promising #fourth-generation semiconductor material, can withstand ultra-high voltages and is cost-effective. It is widely used in systems such as electric vehicles, rail transit, 5G/6G base stations, smart grids, and aerospace, earning the title of the “star material” for the next generation of high-power electronic devices. However, as an emerging material, … Read more
Recommended Media Conference Click the image for details→ Ultra-wide bandgap semiconductor gallium oxide (β-Ga2O3) shows great application prospects in the next generation of ultra-high power electronic devices due to its extremely high critical breakdown field strength and the potential for large substrate fabrication. Inβ-Ga2O3 MOSFET devices, the metal-oxide-semiconductor capacitor (MOSCAP) is the core structure of … Read more
While global chip giants are still battling in the third-generation semiconductor arena, Chinese companies have quietly begun to establish themselves in the narrower and riskier field of gallium oxide. This material, known as “ultra-wide bandgap semiconductor,” can withstand high voltage and high temperatures, with energy consumption only one-thousandth that of silicon-based chips. Core components for … Read more
[Image][Image]Click the blue text above to follow for more exciting content. Hi, I am A-Cheng, and this is my 79th article. Today, in the simplest terms, let’s talk about the first, second, third, and fourth generations of semiconductors. The first generation of semiconductor materials mainly consists of silicon and germanium; the second generation mainly consists … Read more
► Written by Observer Network, Lü Dong, Edited by Zhou Yuanfang In the field of advanced technologies such as semiconductors, the United States frequently intervenes in normal market competition through administrative means. Just a few days ago, Biden signed a $280 billion chip bill that restricts semiconductor giants from investing in China, and now the … Read more