The Impact of High-Temperature O₂ Annealing on the Quality of Al₂O₃/Ga₂O₃ Interface by Researcher Xinke Liu’s Team at Shenzhen University
Recommended Media Conference Click the image for details→ Ultra-wide bandgap semiconductor gallium oxide (β-Ga2O3) shows great application prospects in the next generation of ultra-high power electronic devices due to its extremely high critical breakdown field strength and the potential for large substrate fabrication. Inβ-Ga2O3 MOSFET devices, the metal-oxide-semiconductor capacitor (MOSCAP) is the core structure of … Read more