Asymmetric Schottky Junction Design Achieves Bidirectional, Low-Power Geiger Mode Avalanche Diode
Abstract A research team from Fudan University, East China Normal University, and the Shanghai Institute of Technical Physics, Chinese Academy of Sciences, has designed and fabricated a novel avalanche photodiode (APD) based on a graphene/indium selenide (InSe)/chromium (Cr) asymmetric Schottky junction. This device innovatively realizes the phenomenon of “bidirectional Geiger mode avalanche,” which can occur … Read more