A learning note from an amateur SiC chip enthusiast. Literature organization, industry news, occasional insights, and imaginative thoughts. This public account is a personal learning note, solely for personal hobbies, without any commercial purpose. I apologize for any improper citations in the text. Some people enjoy gardening, singing, or fishing, while others like writing Twitter blogs or TikToks. In recent years, I’ve enjoyed reading papers and books on weekends, exploring cutting-edge material and device technology developments.
Note: Engage in interesting activities and be an interesting soul.
Recently, a friend from a Japanese research institute mentioned that Renesas, one of the top three automotive chip manufacturers globally, has started developing SiC trench MOSFETs. 👍
Renesas has been focusing on SiC for quite some time. They began paying attention to SiC separation devices around early 2012.
Unfortunately, a tsunami caused by an earthquake that year put Renesas in a difficult position, significantly delaying the implementation of new technologies. It wasn’t until the past two years that Renesas began to re-establish its SiC industry chain.
The plan is to build the production line this year and start mass production in 2025. Moreover, they aim to conquer technological heights from the start by developing the next generation of SiC trench MOSFETs. 👍
After looking at Renesas’s SiC device technology layout for the entire morning, I felt that Renesas is a step late! The patent disputes regarding Renesas’s SiC trench MOSFETs are likely to be quite severe!
This is the most typical case of the SiC trench structure we discussed in over ten episodes three or four years ago—the “grounded double-buried” structure IP. Whether in trench structure, process manufacturing methods, performance, or cost, there are challenges for large-scale mass production!
I later told my friend at the Japanese research institute that they might also consider trying our sandwich structure SiC epitaxial wafer solution, which greatly enhances manufacturability and performance expansion! Moreover, we haven’t applied for patent layout in Japan…
The friend from the Japanese research institute asked whether the sandwich structure SiC epitaxial wafer solution is feasible and how the flow sheet looks… No problem at all! The solution recommended by our team usually requires hands-on practice to verify!
By the way, we also created the world’s first SiC accumulation-type channel trench MOSFET, which is incredibly exciting!
Looking forward to celebrating tonight! 🎉
