Photoresist, also known as photoresist, is a non-conductive photosensitive material that transfers patterns from a photomask onto a wafer based on the principle of changing properties when exposed to light. After development, the unexposed photoresist needs to be washed away with a stripping solution to expose the substrate for subsequent etching. Currently, most stripping solutions on the market suffer from slow stripping speed, residue, and corrosion of metals or damage to passivation layers after prolonged use.
In the integrated circuit manufacturing process, the fabrication of semiconductor devices generally undergoes the photolithography process multiple times, which utilizes a non-conductive photosensitive material—photoresist, also known as photoresist. Typically, the photoresist is applied to the substrate, followed by baking, exposure, and development, forming a photoresist pattern on the conductive layer of the semiconductor substrate. The etching process then removes the parts of the conductive layer that are not covered by the photoresist pattern, transferring the pattern onto the wafer surface. After the conductive layer pattern is formed, the photoresist pattern must be removed from the conductive layer using a photoresist stripping agent.
The semiconductor photoresist stripping solution (photoresist stripping solution) is a product in the field of semiconductor processing technology, designed to effectively strip photoresist while having minimal attack on the substrate. It features a fast stripping speed, strong stripping capability, improved stability of the stripping solution system, long service life, and low surface tension, which enhances the removal of photoresist in small gaps. The system employs a large amount of polar non-protonic organic solvents, which are relatively water-soluble and easy to clean after stripping. The reducing agents and inhibitors in the system effectively suppress the corrosive effects of the photoresist stripping solution on the substrate, while effectively removing the photoresist and inhibiting corrosion on various substrates such as metals, silicon, silicon oxide, and passivation layers, thus extending the working time.
Formulation components of the photoresist stripping solution: organic solvents, organic amines, organic alcohols, metal protectants, and inhibitors.
Working temperature: 40-50℃; Treatment time: 10-30 minutes; Treatment method: immersion or spraying.
This photoresist stripping solution has a fast stripping speed, strong stripping capability, and high stability. It maintains stripping performance even at lower temperatures and reduces corrosion on various substrates such as metals, silicon, silicon oxide, and passivation layers, thus extending the working time. It is also water-soluble and easy to clean.
Technical service: Production technology for semiconductor photoresist stripping solution (photoresist stripping solution) formulation: 280 yuan, including production formulation, process flow, performance testing, etc., with technical support provided.
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