Semiconductor Materials (II): GaN Epitaxy
GaN Epitaxy—— The Art of Heterogeneous Integration Growth Gallium Nitride (GaN) is a new generation of wide bandgap semiconductor material, known for itshigh breakdown electric field (>3 MV/cm),high electron mobility (>1500 cm²/V·s), and high saturation electron drift velocity, which are rapidly reshaping the device boundaries in power electronics, high-frequency communications, and RF microwave technologies. In … Read more