Breakthrough Achievement: Successful Tape-Out of 8-Inch High-Performance Trench Gate SiC MOSFET Chip with Independent Intellectual Property Rights!
Shenzhen Pinghu Laboratory, in collaboration withShenzhen Pengjin High-Tech Co., Ltd., has made asignificantbreakthrough in the field ofdomesticwide bandgap semiconductor power devices! Successfully overcomingthe core technical challenges of the 1200V trench gate SiC MOSFET chip, a8-inch process platform has been established,achievinghigh-performance1200Vtrench gateSiCMOSFET chip tape-out success.Itscore invention patent(Patent Publication No.:CN118610269A) has been authorized.This marks a new level … Read more