SiC MOSFET

Decoding SiC MOSFETs: The Power Revolution Hidden in Chip Layouts and Performance Core

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Decoding SiC MOSFETs: The Power Revolution Hidden in Chip Layouts and Performance Core

In the landscape of silicon carbide (SiC) power devices, SiC MOSFET is undoubtedly the brightest star. From traction inverters in new energy vehicles to photovoltaic inverters, from energy storage systems to industrial power supplies, it continuously drives technological innovation in the field of power electronics with its high frequency, high efficiency, and high temperature resistance … Read more

3KW Communication Power Supply Solution Based on STM32G474RBT6 MCU

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3KW Communication Power Supply Solution Based on STM32G474RBT6 MCU

The STDES-3KWTLCP reference design targets a 3 kW/53.5V AC-DC converter power supply for 5G communication applications, utilizing a complete ST digital power solution. The circuit design includes a front-end totem pole PFC and a back-end LLC full-bridge architecture. The front totem pole PFC provides power factor correction (PFC) and harmonic distortion (THD) suppression, while the … Read more

Design and Manufacturing of Silicon Carbide Chips

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Design and Manufacturing of Silicon Carbide Chips

Click the blue textto follow usIt is well known that for Silicon Carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be obtained from external sources. However, this only provides a good foundation for obtaining a Silicon Carbide device. High-performance Silicon Carbide devices have extremely high requirements for … Read more

Breakthrough Achievement: Successful Tape-Out of 8-Inch High-Performance Trench Gate SiC MOSFET Chip with Independent Intellectual Property Rights!

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Breakthrough Achievement: Successful Tape-Out of 8-Inch High-Performance Trench Gate SiC MOSFET Chip with Independent Intellectual Property Rights!

Shenzhen Pinghu Laboratory, in collaboration withShenzhen Pengjin High-Tech Co., Ltd., has made asignificantbreakthrough in the field ofdomesticwide bandgap semiconductor power devices! Successfully overcomingthe core technical challenges of the 1200V trench gate SiC MOSFET chip, a8-inch process platform has been established,achievinghigh-performance1200Vtrench gateSiCMOSFET chip tape-out success.Itscore invention patent(Patent Publication No.:CN118610269A) has been authorized.This marks a new level … Read more