| Process Node | Process Type | Technical Features |
|---|---|---|
| 2nm | Logic, Nanosheet (0.75V, shrink) | Utilizes nanosheet technology with a 0.75V operating voltage and shrink characteristics, which helps improve chip integration and performance. |
| 3nm | Logic, Fin FET (0.75/1.2V, shrink)Logic, Fin FET (0.75/1.2V, Non-shrink) | Based on Fin Field Effect Transistor technology, it offers different voltage combinations (0.75/1.2V) with both shrink and non-shrink versions to meet various performance and cost requirements. |
| 4nm | Logic, Fin FET (0.75/1.2V) | Employs Fin Field Effect Transistor technology with 0.75/1.2V voltage settings, suitable for chip designs with specific power and performance requirements. |
| 5nm | Logic, FinFET (FF) (0.75/1.2V) | Utilizes Fin Field Effect Transistor technology with a 0.75/1.2V operating voltage, commonly used in high-performance computing and mobile device chips. |
| 6nm | Logic, Fin FET (0.75/1.8V) | Based on Fin Field Effect Transistor technology with a 0.75/1.8V voltage, achieving a balance between cost and performance, suitable for various application scenarios. |
| 7nm | Logic, Fin FET (0.75/1.8V) | Fin Field Effect Transistor process with a 0.75/1.8V voltage, a mature advanced process widely used. |
| 12nm | Logic, FinFET Compact (0.8/1.8V)Logic, FinFET Compact Plus (0.8/1.8V)RF, FinFET Compact Plus (0.8/1.8V) | Compact and enhanced versions of Fin Field Effect Transistor technology, used for logic and RF functions, with a voltage of 0.8/1.8V, meeting various circuit function requirements. |
| 16nm | Logic, FinFET Compact (0.8/1.8V)Logic, FinFET Compact Plus (0.8/1.8V)Logic, FinFET Plus (0.8/1.8V)RF, FinFET Compact (0.8/1.8V)High Voltage, FinFET Plus (0.8/1.8/8/25V) | A variety of Fin Field Effect Transistor processes covering logic, RF, and high voltage domains, with different voltage combinations to meet diverse circuit design requirements. |
| 22nm | Logic, ULP (0.8/1.8V, 0.8/2.5V)Logic, ULL (0.8/1.8V, 0.8/2.5V)RF ULP (0.8/1.8V)RF ULL (0.8/1.8V, 0.8/2.5V)MRAM ULL (0.8/1.8V, 0.8/2.5V)MRAM RF ULL (0.8/1.8V, 0.8/2.5V)ReRAM RF ULL (0.8/2.5V) | Includes ultra-low power (ULP) and low power (ULL) logic, RF, and related memory processes, with various voltage combinations suitable for power-sensitive electronic devices. |
| 28nm | Logic, HPM (0.9/1.8V, 0.9/2.5V)Logic, HPC (0.9/1.8V, 0.9/2.5V)Logic, HPC Plus (0.9/1.8V, 0.9/2.5V)Logic, HP (0.85/1.8V, 0.85/2.5V)Logic, LP (1.05/1.8V, 1.05/2.5V)Logic, HPL (1.0&1.8V, 1.0/2.5V)RF HPC Plus (0.9/1.8V, 0.9/2.5V)RF HPC (0.9/1.8V, 0.9/2.5V)RF LP (1.05V/1.8V)RF HPL (1.0/1.8V, 1.0/2.5V)High Voltage (0.9/8/25/28V) | A variety of high-performance (HP, HPC, HPC Plus, HPM), low-power (LP, HPL) logic and RF processes, as well as high-voltage processes, with different voltage combinations to meet performance needs across various application scenarios. |
| 40nm LP & 45nm GS (45GS = 40G) | Logic, 40LP (1.1/1.8V, 1.1/2.5V)Logic, 40LP Plus (1.1/2.5V)Logic, 40ULP (1.1/2.5V, 0.9/2.5V)Mixed-Signal/RF, 40LP (1.1/1.8V, 1.1/2.5V)Mixed-Signal/RF, 40ULP (1.1/2.5V, 0.9/1.8V, 0.9/2.5V)Logic, 45GS (45GS = 40G) (0.9/1.8V, 0.9/2.5V)High Voltage (1.1/5/6/25/32V)High Voltage (1.1/8/25V)ReRAM, RF 40ULP (0.9V/2.5V)EmbFlash, 40LP (1.1/2.5V)EmbFlash, 40ULP (0.9V/2.5V) | 40nm low power and related mixed-signal/RF processes, 45nm equivalent 40G processes, high voltage and memory processes, with various voltage combinations suitable for mid to low-end chip designs. |
| 55nm | Logic, GP (1.0/1.8V, 1.0/2.5V)Logic, LP (1.2/2.5V)Logic, ULP (0.9V/2.5V)Mixed-Signal/RF, LP(1.2/ 2.5V)Mixed Signal/RF, ULP (0.9V/2.5V)EmbFlash (1.2/2.5V)EmbFlash, ULP (0.9&2.5V) | General-purpose (GP), low-power (LP, ULP) logic and mixed-signal/RF processes, as well as embedded flash processes, with different voltage combinations suitable for cost-sensitive applications. |
| 65nm | Logic, LP/DGO (1.2/2.5V,1.2/3.3V)Logic, GP /DGO (1.0/1.8V, 1.0/2.5V, 1.0/3.3V)Logic, LP-based TGO (1.0/1.2/2.5V)Logic, ULP (1.0/2.5V)Mixed-Signal/RF, GP(1.0/ 2.5V)Mixed-Signal/RF, LP(1.2/ 2.5V) | A variety of logic and mixed-signal/RF processes with different voltage combinations and optimization types (DGO, TGO) to meet diverse circuit needs. |
| 90nm | Logic, G (1.0/1.8V, 1.0/2.5V, 1.0/3.3V, 1.0/1.8/3.3V)Logic, LP (1.2/2.5V, 1.2/3.3V)Logic, GT (High Performance) (1.2/2.5V)Mixed-Signal/RF,G(1.0/1.8V, 1.0/2.5V, 1.0/3.3V, 1.0/1.8/3.3V)Mixed-Signal/RF, LP (1.2/2.5V, 1.2/3.3V)EmbFlash, LP (1.2/3.3V)High voltage, BCD (5/VG5V)High voltage, BCD (5/HV/VG5V)High voltage, BCD (1.5/5/HV/VG1.5/5V)High voltage, BCD (1.5/5/VG1.5/5V) | A variety of logic, mixed-signal/RF, and embedded flash processes with different voltage combinations; high-voltage bipolar – complementary metal-oxide-semiconductor (BCD) processes to meet various voltage and functional requirements. |
| 0.13um | Logic, G (1.2/2.5V,1.2/3.3V); FSGLogic, LP (1.5/2.5V,1.5/3.3V); FSGLogic, LV (1.0/2.5V,1.0/3.3V); FSGMixed-Signal/RF, G (1.2/2.5V,1.2/3.3V); FSGMixed-Signal, LP (1.5/3.3V); FSGHigh Voltage, BCD (1.5/5/10/20/28/36V)High Voltage, BCD (1.5/3.3/5/10/20/28/36V)High Voltage, BCD Plus (5/10/12/16/20/24/28/36/VG5V)High Voltage, BCD Plus (1.5/5/10/12/16/20/24/28/36/VG1.5/5V)High Voltage, BCD Plus (1.5/3.3/5/10/12/16/20/24/28/36/VG1.5/3.3/5V) | A variety of logic, mixed-signal/RF, and high-voltage BCD processes, where FSG may indicate specific process identifiers, with different voltage combinations suitable for various circuit designs. |
| 0.18um | Mixed-Signal/RF, G (1.8/3.3V)Mixed-signal/RF, G (1.8/3.3V) embedded MTPMixed-signal/RF, G (1.8/3.3V) embedded OTP (Kilopass/eMemory)Mixed Signal, G, (1.8/5V)Mixed Signal, GPIIA, (1.8/5V)Logic, G (1.8/3.3V)Logic, G (1.8/3.3V), Embedded OTP/ MTPLogic, LV (1.5/3.3V)Logic, LP (1.8/3.3V)SiGe BiCMOS, G (1.8/3.3V)EmbFlash(1K,20K) (1.8/3.3V)EmbFlash Enhanced (1.8/3.3V)EmbFlash Enhanced (1.8/5V)EmbFlash HDR (1.8/3.3V)EmbFlash eLL(1.8/3.3V)High Voltage, BCD (Generation-2)High Voltage, BCD (Generation-3) | A variety of mixed-signal/RF, logic, embedded storage, and high-voltage BCD processes with different voltage combinations to meet various application circuit design needs. |
| 0.25um | Logic, G (2.5/3.3V, 2.5/5V)Mixed-Signal/RF, G (2.5/3.3V, 2.5/5V)High Voltage, BCD (2.5/5/12/24/40V/Vg2.5/5V)High Voltage, BCD (2.5/5/12/24/40/Vg2.5/5/12V)High Voltage, BCD (2.5/5/60V/Vg 2.5/5V)High Voltage, BCD (2.5/5/12/24/40/60/Vg2.5/5/12V)High Voltage, Gen-2 BCD (2.5/5/7/12/20/24/40/45/60V/Vg 2.5/5/12V) | A variety of logic, mixed-signal/RF, and high-voltage BCD processes with different voltage combinations suitable for circuits with specific voltage and functional requirements. |
| 0.35um | Logic, G, Polycide/Silicide (3.3/5V)Mixed-Signal, G (3.3/5V)High Voltage, G, DDD (3.3/12/13.5)High Voltage, DDD (3.3/12/13.5/15/18V)High Voltage, BCD (3.3/20/23/Vg3.3V)High Voltage, BCD (3.3/5/12/15/20/40/Vg3.3/5/12V)SiGe BiCMOS, G (3.3V) | Includes logic, mixed-signal processes, as well as various high-voltage processes and silicon-germanium bipolar complementary metal-oxide-semiconductor processes, suitable for different voltage and functional requirements in circuit design. |
| 0.5um | High Voltage, (5/20/450/600/700/800V) |
Link:http://www.szicc.org.cn/attachment/0/80/80748/1230778.pdf