Winbond Electronics: Global Leader in NOR FlashWinbond Electronics Corporation was established inSeptember 1987,listed on the Taiwan Stock Exchange in 1995, headquartered in the Central Taiwan Science Park.NOR Flash has a global market share of27%, rankingfirst for several consecutive years, focusing on the mid-low density market of 512Kb-2Gb, with technology having evolved to45nm.Customized Memory (CMS) includes DRAM, LPDDR, etc., being the fifth largest DRAM supplier globally, focusing on small to medium capacity and special applications,with 20nm technology already in mass production, planning to upgrade to 16nm.SPI NAND Flash: 13% market share, ranking third globally, primarily targeting the small capacity market for wearable devices..
Macronix: Leading NOR Manufacturer
Macronix was established in Hsinchu, Taiwan in 1989,listed in Taiwan in 1995.
Macronix has a 12-inch wafer fab (Fab 5) and an 8-inch wafer fab (Fab 2) primarily used for designing and producing non-volatile memory, with 45nm 1.8 NOR flash products already in mass production, and 55nm 1.2V NOR Flash samples being sent out.
According to Macronix’s 2024 annual report: NOR Flash revenue accounted for 59% of total revenue, with major demand coming from high-quality and high-value automotive, industrial, and medical communication products, accounting for over 40%; ROM revenue accounted for 22%, NAND Flash revenue accounted for 11%, and the 96-layer 3D NAND Flash series products have gradually stabilized production in 2023, with plans to develop enterprise-grade SSD products in the future.
GigaDevice: Domestic leader in NOR FLASH, ranking second globally
NOR Flash: Ranks second in the global market, first domestically. Capacity ranges from 512Kb to 2Gb, supporting various power supply types including 1.2V, 1.8V, 3V, 1.65~3.6V, and 1.8VVCC & 1.2VVIO.
SLC NAND Flash: Ranked sixth globally in 2024, first in mainland China. Product capacity ranges from 1Gb to 8Gb, powered by 3V/1.8V.
DRAM: Has launched DDR4, DDR3L, and LPDDR4 series products. In 2024, the company ranks seventh globally and second in mainland China.
Purang SemiconductorNOR Flash: Utilizes charge trap (SONOS) and floating gate (ETOX) process structures, with capacities ranging from 512Kbit to 1Gbit, and voltage coverage from 1.1V to 3.6V. Full series products from 4Mbit to 128Mbit have achieved mass production under 40nm SONOS process, and 55nm and 50nm processes have achieved mass production of full capacity series products from 4Mbit to 1Gbit.EEPROM: Product capacity ranges from 2Kbit to 4Mbit, operating voltage ranges from 1.2V to 5.5V, mainly using 130nm process technology, with some medium to large capacity products using 95nm and below process technology already in mass production.Dongxin SemiconductorNOR Flash: Based on 48nm and 55nm processes, with capacities ranging from 64Mb to 2Gb.Storage.SLC NAND Flash: 2xnm process product series continues to iterate, constantly expanding product numbers, with 1xnm products entering risk mass production stage.DRAM: DDR3L and LPDDR4X products have been mass produced. MCP: Can provide combinations of4Gb+4Gb, 8Gb+8Gb, 16Gb+16Gb, etc., for 5G communication modules, automotive modules, etc.Fudan MicroelectronicsSLC NAND Flash: Mainly composed of FM25/FM29 series, supporting SPI, ONFI parallel interfaces, with storage capacities from 1Gb to 8Gb.NOR Flash: Mainly composed of FM25/FM29 series, supporting SPI and general parallel interfaces, with storage capacities from 0.5Mb to 2Gb.EEPROM: Mainly composed of FM24/FM25/FM93 series, supporting I2C, SPI, and Micro Wire interfaces, with storage capacities from 1Kbit to 2Mbit. DDR5 memory interface chip products such as SPD5 Hub and TS5 will also be launched successively. Jucheng Co., Ltd.NOR Flash: Based on NORD process, product capacities range from 512Kb to 128Mb, with 512Kb-32Mb already achieving mass shipment, and 64Mb and 128Mb NOR Flash products successfully completing tape-out, while 512Kb-8Mb NOR Flash products have passed third-party authoritative AEC-Q100 Grade 1 automotive electronic reliability testing.EEPROM: Ranked third globally in 2024, with a global market share of approximately 15.9%, ranking first among domestic EEPROM companies. It is one of the few companies in the industry with the R&D and design capabilities for both industrial-grade EEPROM products and automotive-grade EEPROM products. Product capacity ranges from 1Kb to 2Mb.Hengshuo Co., Ltd.NOR Flash: Based on ETOX process, mainly using Wuhan Xinxin 50nm process and SMIC 55nm process. Capacity ranges from 1Mbit to 512Mbit, with voltage coverage from 1.65V to 3.6V.NAND Flash: Equipped with mainstream international 24nm NAND Flash original factory wafers, product capacity ranges from 1Gb to 4Gb, 32Gb to 64Gb, with all series products featuring built-in ECC, achieving up to 8bit/512Byte error correction capability. Products can provide various types such as SPI NAND, SD NAND, and PPI NAND 32Gb to 64Gb, all with built-in ECC, achieving up to 8bit/512Byte error correction capability.eMMC: Products cover various capacities of 8GB, 32GB, 64GB, 128GB, and 256GB.DRAM: DDR4 products are expected to be mass-produced in the first half of 2025. Products will also cover major capacities of 4Gb and 8Gb, with speeds reaching the industry’s highest DDR4 rate of 3200Mbps.
Wuhan Xinxin
Founded in Wuhan in 2006, it is a leading semiconductor specialty process 12-inch wafer foundry enterprise in mainland China, providing 40nm and above process foundry services.
It is the largest NOR Flash manufacturer in the country, mastering both floating gate (50-65nm) and charge trap technology routes.
