Dongke Semiconductor Launches Integrated GaN PFC Chip DK8318 for Next-Generation High Power Density Fast Charging Power Supplies

Introduction

Since 2020, Dongke Semiconductor has been continuously focusing on the field of integrated chips, successively launching the industry’s first fully integrated GaN asymmetric half-bridge product, the only fully integrated high-voltage active clamp flyback (ACF) chip, integrated quasi-resonant (QR) flyback chip, and a series of highly integrated synchronous rectification integrated chips. These products have successfully simplified peripheral components, reduced debugging difficulty, and controlled costs. By integrating power devices, drivers, and controllers, PCB area and parasitic connections can be effectively reduced, enhancing system integration and reliability.

At the 2025 (Spring) Asia Charging Exhibition and Asia Charging Conference held on March 28, Dongke Semiconductor announced the upcoming launch of the new integrated PFC chip DK83XX series. Recently, the first product, DK8318, was officially released, integrating a 700V/101mΩ GaN power transistor with a CRM/DCM PFC controller in an ESOP16L package. With features such as valley conduction, output voltage segmentation, input power compensation, and extremely low standby power consumption, it targets high power density power applications within 180W. Next, we will provide a detailed introduction to this new product.

Dongke DK8318

DK8318 is a critical/discontinuous mode PFC conversion chip designed for high-performance offline power supplies under 180W, featuring a built-in 700V / 101mΩ ultra-low on-resistance GaN power transistor, and integrating control and power devices. It provides a high power density, low loss integrated solution for front-end PFC stages in adapters, computer power supplies, printer power supplies, and LED drivers.

DK8318 supports a wide input range of 85–265Vac and can be flexibly paired with various isolated topologies such as Flyback, AHB, LLC, helping the entire system achieve comprehensive optimization of high efficiency, high power factor, and compact size. It also offers intelligent bus voltage segmentation, reducing the bus voltage to approximately 264V during low line conditions to minimize losses and heat, and restoring it to about 400V during high line conditions, balancing efficiency with design space for the subsequent topology. This is a significant differentiated advantage compared to traditional PFC solutions.

Dongke Semiconductor Launches Integrated GaN PFC Chip DK8318 for Next-Generation High Power Density Fast Charging Power Supplies

In terms of control architecture, DK8318 operates in critical conduction mode (CRM) under heavy load and automatically switches to discontinuous conduction mode (DCM) during light load and standby stages. Coupled with valley conduction technology, it effectively reduces turn-on losses and switching noise, significantly improving system efficiency and EMI performance across the entire load range.

Dongke Semiconductor Launches Integrated GaN PFC Chip DK8318 for Next-Generation High Power Density Fast Charging Power Supplies

DK8318 optimizes standby control and internal power management, reducing no-load power consumption to the level of 25mW@115Vac and 39mW@230Vac. This means that without shutting down the PFC, it can still meet the energy efficiency regulations of CoC V5 Tier 2 and DoE Level VI. This allows the overall design to pass standby power consumption tests without the need for additional complex PFC bypass or shutdown circuits, reducing system design difficulty and costs.

Dongke Semiconductor Launches Integrated GaN PFC Chip DK8318 for Next-Generation High Power Density Fast Charging Power Supplies

DK8318 includes a comprehensive multi-protection mechanism, including VCC undervoltage protection, output overvoltage/undervoltage protection, two-level overcurrent protection, bypass diode short-circuit protection, current sampling resistor open-circuit protection, and over-temperature protection, ensuring system safety and controllability. DK8318 is also specifically designed and specified for the current capability and temperature relationship of GaN devices, combined with high ESD ratings, allowing the chip to maintain good reliability in high-frequency, high dv/dt application environments. DK8318 uses an ESOP16L package.

Summary from Charging Head Network

DK8318 integrates a 700V low on-resistance GaN power transistor with a critical/discontinuous mode PFC controller into a single ESOP16L chip, supporting a wide input range of 85–265Vac, operating in heavy load CRM and light load DCM, combined with valley conduction and 400V/264V bus segmentation design. It balances high efficiency, high power factor, and better low line loss and thermal performance in applications under 180W, while also featuring extremely low standby power consumption and comprehensive protection, significantly simplifying the PFC design difficulty for high power density power supplies.

Integrated solutions like DK8318 for GaN PFC help lower the threshold for engineering teams to master high-frequency GaN and high power factor designs, accelerating the upgrade and iteration of high power density, miniaturized power supplies in fields such as adapters, monitor power supplies, and LED drivers.

Related Articles:

1、Dongke Semiconductor’s first 100 million self-designed and packaged GaN power chips officially shipped!

2、Facilitating charger miniaturization, a review of Dongke DK036G integrated GaN application cases

3、Why well-known brands like Anker and SeaSonic choose Dongke power chips, this article gives you the answer

4、Dongke launches a 200W AI PC one-stop GaN power solution, achieving zero noise and high efficiency

5、Dongke power chips enter the supply chains of well-known brands like Anker, Lenovo, and Razer

Leave a Comment