HEMT

Wide Bandgap Semiconductor Chips

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Wide Bandgap Semiconductor Chips

Gallium Nitride (GaN), Gallium Oxide (Ga₂O₃), and Diamond are recognized as strategic advanced electronic materials internationally. Among them, GaN, as a representative of wide bandgap semiconductors, possesses excellent material characteristics such as a large bandgap, high breakdown field strength, and high electron saturation drift velocity. It is the core of short-wavelength optoelectronic devices, microwave RF … Read more

Semiconductor Materials (II): GaN Epitaxy

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Semiconductor Materials (II): GaN Epitaxy

GaN Epitaxy—— The Art of Heterogeneous Integration Growth Gallium Nitride (GaN) is a new generation of wide bandgap semiconductor material, known for itshigh breakdown electric field (＞3 MV/cm),high electron mobility (＞1500 cm²/V·s), and high saturation electron drift velocity, which are rapidly reshaping the device boundaries in power electronics, high-frequency communications, and RF microwave technologies. In … Read more