Gallium Nitride (GaN), Gallium Oxide (Ga₂O₃), and Diamond are recognized as strategic advanced electronic materials internationally. Among them, GaN, as a representative of wide bandgap semiconductors, possesses excellent material characteristics such as a large bandgap, high breakdown field strength, and high electron saturation drift velocity. It is the core of short-wavelength optoelectronic devices, microwave RF … Read more
R-BINAP, R-(+)-2,2′-bis(diphenylphosphino)-1,1′-binaphthyl 【(R)-(+)-2,2′-Bis(diphenylphosphino)-1,1′-binaphthyl】 【CAS Number】76189-55-4 【Appearance】White powder S-BINAP, S-(-)-2,2′-bis(diphenylphosphino)-1,1′-binaphthyl 【(S)-(-)-2,2′-Bis(diphenylphosphino)-1,1′-binaphthyl】 【CAS Number】76189-56-5 【Appearance】White powder In 1980, Noyori first synthesized BINAP and used it in chiral catalysis, demonstrating excellent enantioselectivity. Subsequently, BINAP and various metal (Ru, Pd, Ag, Rh, Ir, Au) complexes were continuously used in various reactions. Asymmetric hydrogenation reactions reduced aldehydes and ketones, used … Read more