Source: Tom Talks Chips and Manufacturing
Original Author: Tom
How are chips classified, and what is their relationship with the first, second, third, and fourth generations?
First Generation Semiconductors
Representative materials: Silicon (Si), Germanium (Ge).
Disadvantage of Germanium: Poor thermal stability.
The emergence of germanium transistors in 1948 led to rapid development from 1950 to the early 1970s. Subsequently, they began to be gradually phased out in developed countries. By 1980, with the maturation of high-purity silicon production processes, germanium transistors were almost completely replaced by silicon transistors worldwide.
Second Generation Semiconductors
Representative materials: Gallium Arsenide (GaAs), Indium Phosphide (InP).
1. High electron mobility;
2. Direct bandgap, very efficient in optoelectronic applications, as electrons can directly transition and release photons, such as in LEDs and lasers.
Third Generation Semiconductors
Representative materials: Silicon Carbide (SiC), Gallium Nitride (GaN), Zinc Selenide (ZnSe).
Advantages: Wide bandgap, high breakdown voltage, and high thermal conductivity. Suitable for high temperature, high power, and high frequency applications.
Fourth Generation Semiconductors
Ga2O3 single crystal substrate
Representative materials: Gallium Oxide (Ga2O3), Diamond (C), Aluminum Nitride (AlN), and Boron Nitride (BN), etc.
Advantages: Ultra-wide bandgap; high breakdown voltage; high carrier mobility, etc.
Disadvantages: Difficulties in material growth and preparation; immature manufacturing processes, with many key technologies not fully overcome.
END
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Does not represent the position of the Institute of Semiconductors, Chinese Academy of Sciences
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