Kuntai Family | Successful Tape-Out of Silicon Carbide Shallow Junction Chips, Overcoming Key Leakage Issues
Recently, Tianlang Semiconductor has made significant breakthroughs in the development of silicon carbide shallow junction MOS chips. The design of this silicon carbide shallow junction MOS has achieved remarkable performance improvements under the technical conditions where the JFET and junction depth are at their limit, with a breakdown voltage (BVDSS) reaching 1670V and a specific … Read more
