Recently, Tianlang Semiconductor has made significant breakthroughs in the development of silicon carbide shallow junction MOS chips. The design of this silicon carbide shallow junction MOS has achieved remarkable performance improvements under the technical conditions where the JFET and junction depth are at their limit, with a breakdown voltage (BVDSS) reaching 1670V and a specific on-resistance (RSP) of 2.4mΩ·cm². These technical specifications have successfully surpassed those of similar products from STMicroelectronics (STM) and Wolfspeed, and the product has now smoothly transitioned into mass production.
This milestone not only marks a new level of technological strength in China’s silicon carbide chip field but also provides more efficient and reliable core component solutions for various industries such as new energy vehicles, photovoltaic power generation, and smart grids.
It is noteworthy that Tianlang Semiconductor’s shallow junction chip has reduced the on-resistance by 40% compared to the previous generation and has also overcome the key core issue of shallow junction technology—leakage current. Tests show that the leakage current (Idss) of this generation of shallow junction products can be stably controlled within 20nA, reaching the first-tier level in the industry. This means that the chip can operate with lower power consumption and higher efficiency, providing customers with a superior user experience across multiple application scenarios, further promoting technological upgrades and cost optimization in related industries.
Widely Applied, Supporting Upgrades Across Multiple Fields
Energy Storage Sector
As global demand for renewable energy continues to grow, the importance of energy storage systems has become increasingly prominent. Tianlang Semiconductor’s silicon carbide shallow junction MOS series products, with their efficient and stable performance, can effectively enhance the charge and discharge efficiency of energy storage systems, extending battery life and injecting new vitality into the energy storage industry.
New Energy Vehicle Main Drive
In the field of new energy vehicles, the performance of chips directly affects the vehicle’s power performance and range. Tianlang Semiconductor’s chips feature high voltage resistance, low resistance, and high EAS impact resistance, significantly reducing energy loss in the main drive system, enhancing the vehicle’s power output and energy utilization, and helping the new energy vehicle industry reach new heights.
New Energy Vehicle Charging Piles
High-power DC fast charging has become a development trend in the charging pile industry. Tianlang Semiconductor’s silicon carbide shallow junction MOS series products can meet the high power and high efficiency requirements of charging piles, achieving faster charging speeds and reducing user waiting times, providing strong support for the development of the charging pile industry.
OBC (On-Board Charger)
As an important component of new energy vehicles, the performance requirements for chips in OBC are extremely high. Tianlang Semiconductor’s silicon carbide shallow junction MOS series products can effectively improve the conversion efficiency of OBC, reduce heat generation, and enhance the reliability and stability of the system.
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Private Fund Manager [Registration Number: P1061262]
Kuntai Capital – A market-oriented industrial investment institution focused on high-tech layouts, with a focus on emerging industries, deeply exploring hidden champions, and supporting quality enterprises at different stages for sustainable development.
The investment team at Kuntai Capital gathers professionals from diverse industry backgrounds to discover grounded, high-growth enterprises. It focuses on entrepreneurial companies that fill domestic technology and product gaps, delving into fields such as integrated circuits, semiconductors, new energy, new materials, advanced manufacturing, and biomedicine.
Funds under management22 funds, with over 23 invested enterprises, including Shandong Jinggong, Yinzhu Pharmaceutical, Jinwei New Materials, Damaoniu, Yamamoto Optoelectronics, Te Yi Technology, Zhilin Weiye, Baiwei Storage, Xingsheng Permanent Magnet, Rishengda, Xinghui New Materials, Zhongji Guowei, Chengyi Intelligent, Hongshun Silicon-based, Tianlang Chip, Hexia Technology, Pinejet, Xinsulian, New Jixun, Torrance and others.
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