In the first quarter of 2025,Nanjing Xingganxian Technology has broken barriers in AI computing infrastructure, consumer electronics fast charging, high-end audio power supplies, and commercial energy storage, driven by third-generation semiconductor technology, successfully entering multipleglobal first-tier brand supply chains, demonstrating the international competitiveness of“Chinese chips”. These four landmark achievements not only confirm the company’s leading position in the power semiconductor field but also outline its strategic blueprint for entering the global high-end market.
01
AI Computing Infrastructure Breakthrough
Entering the global first-tier AI server supply chain, opening a new chapter in AI computing power supply
Against the backdrop of exponential growth in AI computing power demand, Xingganxian’s self-developed 700V enhanced Gallium Nitride (GaN) power devices and 1200V Silicon Carbide (SiC) MOSFETs have successfully passed reliability verification from a leading global AI server brand after nearly three years of testing from device level to system integration in various environments, with mass production expected to officially commence in the second quarter of 2025.
The core advantage of this breakthrough lies in the“high frequency, high efficiency + high reliability” technology combination, achieving server power module efficiency exceeding 96%, while reducing the size to one-third of silicon-based solutions. This feature is crucial for tech giants deploying ultra-large-scale data centers: for example, in a cluster of 100,000 AI servers, the Xingganxian solution can save approximately 30% of cooling energy consumption, reducing annual operating costs by over ten million yuan.
Industry data shows that the global AI server market is expected to reach $298 billion by 2025. With its technological first-mover advantage, Xingganxian has established deep cooperation with the global first-tier AI server supply chain and is poised to occupy a key position in the wave of domestic AI computing infrastructure.
02
Leading the Fast Charging Sector in Consumer Electronics
Global first-tier mobile phone brand PD fast charging enters mass production, defining a new charging experience
In the 3C consumer electronics field, the 45W GaN PD fast charging solution customized for a global first-tier mobile phone brand by Xingganxian has achieved large-scale mass production in Q1. This solution integrates the company’s third-generation GaN HEMT device (X3G6516B5),X3G6516B5 is a700V enhanced (E-mode) GaN power device with a on-resistance of 150mΩ, in a DFN5x6 package.
In the mobile fast charging industry, as brands like Apple and Huawei gradually equip their flagship models with 100W fast charging in 2025, Xingganxian has entered the stage of simultaneous supply to multiple brands.
According to supply chain sources, the explosive growth of its business has not only solidified the company’s technical voice in the consumer electronics field but also achieved high-frequency exposure of brand value to hundreds of millions of consumers through end products.
03
Revolutionizing High-End Audio Power Supplies
Mass production in the global first-tier audio amplifier power supply industry injects new vitality into the sector
In the professional audio field, the GaN power supply solution developed by Xingganxian for high-end audio amplifiers has passed certification from international first-tier brands and achieved mass production. Traditional silicon-based power supplies typically have a THD+N (Total Harmonic Distortion + Noise) exceeding 0.5% when driving high-fidelity audio, while the Xingganxian solution, throughpure power output technology, reduces this metric to 0.08%, reaching professional monitoring level.
The high-frequency characteristics of Gallium Nitride (GaN) positively impact audio quality. GaN is a wide bandgap semiconductor material with fast switching speeds and low on-resistance, making it perform excellently in Class D audio amplifiers. Specifically, the high-frequency characteristics of GaN can significantly reduce energy loss during the switching process, thereby improving amplifier efficiency.
Moreover, the high switching frequency of GaN results in finer and quicker energy fluctuations during the power conversion process. This means that the output current and voltage are more stable, greatly reducing the generation of electromagnetic noise and further enhancing sound quality.
Notably, its 1200W amplifier power supply module is only one-fifth the size of traditional solutions, adapting to the high-end audio design trend of “lightweight + high power,” and has been applied by multiple brands in the latest desktop Hi-Fi systems and car audio.
Data shows that the global high-end audio market is expected to reach $12 billion by 2025. As one of the few suppliers mastering the full-link GaN audio power supply solutions, Xingganxian is accelerating the acquisition of international brand orders, with audio business revenue expected to grow by 50% quarter-on-quarter in Q2.
04
Custom Breakthrough in Commercial Energy Storage
1200V Silicon Carbide MOSFET mass production opens a new era of high-voltage energy storage
In the new energy storage field, the 1200V all-silicon carbide module (XS004HB120N6, XS003HB120N6) customized for a leading domestic commercial energy storage company by Xingganxian officially commenced production in Q1. With an ultra-low on-resistance of 3mΩ, significant improvements have been achieved in both on-resistance and dynamic performance. This outstanding performance advantage not only enhances energy conversion efficiency but also reduces system power consumption, providing users with a more efficient and reliable experience. Whether in the electric vehicle sector or other new energy applications, the all-SiC module technology platform demonstrates strong competitiveness.
This marks that Xingganxian’s products have met the access standards of mature markets such as North America and Europe. With global energy storage installations expected to exceed 500GWh by 2025, the company is accelerating the layout of 1700V high-voltage SiC modules, aiming to cover trillion-level markets such as grid-level energy storage and electric vehicle drives, forming a full industry chain competitiveness of “material research and development – device manufacturing – system integration.”
Four Major Businesses Advancing Together, Originating from Xingganxian’s Unique “Scenario Definition Technology” R&D Strategy
Vertical Integration Capability: Three laboratories and two testing centers, along with a specialized semiconductor packaging base in the Jianhu factory, enable Xingganxian to achieve full-process autonomy from wafer design to module packaging, with key process yield exceeding 99.2%;
Customer Collaborative Innovation: Establishing joint laboratories with international first-tier brands for customized development targeting scenarios such as liquid cooling for AI servers and low-temperature startup for mobile fast charging, shortening the technology implementation cycle;
Patent Barrier Construction: Accumulated over 100 GaN/SIC-related patent applications, with core patents such as “high-frequency device thermal management technology” and “multi-chip integrated packaging” forming a technological moat.
Looking ahead to 2025, Xingganxian plans to increase R&D investment to 25% of revenue, focusing on breakthroughs in automotive-grade SiC MOSFETs and 800V high-voltage fast charging solutions, aiming for a breakthrough from 0 to 1 in the power semiconductor market for new energy vehicles.
As the company CEO stated in the quarterly meeting: “We are not just a device supplier, but also a promoter of the energy efficiency revolution. When the technical demands of AI computing power, green energy, and consumer electronics converge on third-generation semiconductors, Xingganxian is becoming the ‘power bridge’ connecting the future.”
The Q1 performance report of Nanjing Xingganxian is not only a testament to technological breakthroughs but also a microcosm of Chinese semiconductor companies transitioning from “catching up” to “running alongside.” Amid the dual opportunities driven by the explosion of AI computing power and carbon neutrality goals, the company proves that the “Chinese solution” in the power semiconductor track has the strength to define global standards.
With the opening of mass production in Q2, Xingganxian is navigating at full speed in the global high-end market wave with technology as its oar, writing a new chapter for the rise of “Chinese chips.”
About Xingganxian
Xingganxian Technology is a manufacturer of wide bandgap power devices founded by experienced overseas PhD experts in power semiconductors, market elites in the power industry, and a group of young professionals with entrepreneurial dreams. In 2022, it was recognized as a large-scale enterprise, and in 2023, it was designated as a national-level technology-based small and medium-sized enterprise and a national-level high-tech enterprise, having passed ISO9001 production quality management system certification. In 2024, it passed the IATF16949 automotive component production quality management system certification.
Since its establishment, the company has focused on the research and development and sales of power devices and modules such as power MOSFETs & IGBTs, GaN HEMTs, SiC MOSFETs & SBDs, IGBTs, and SiC Modules. Its products are widely used in energy power conversion and application fields such as consumer electronics, photovoltaics, energy storage, automotive, AI servers, and industrial automation.
The company is headquartered in Nanjing, with branches in Shenzhen, Suzhou, Jiangsu, and other domestic locations, and extending to North America and Taiwan, continuously expanding its business footprint.
01Contact Number
Nanjing Headquarters: 025-51180705
Shenzhen Branch: 0755-36991759
02Email
Email: [email protected]
03Company Website
Website: https://x-ipm.com