This is a testament to the glory of the city, a historical epic that stirs the industrial landscape. Since its emergence in 2005, the “Ningbo Entrepreneurship and Innovation Ranking” has measured the industrial leap along the East China Sea over twenty years, inscribing the legend of entrepreneurship and innovation in Ningbo, continuously projecting the strong voice of progress in the new era to the world.
At this moment, they gather again, and in addition to many leading enterprises, this year’s rankings have seen a surge of emerging star companies that are thriving and growing. Starting today, we launch the “New Forces in the Rankings” series to seek the stories of Ningbo’s new star enterprises.
Researchers in experiments. All images are provided by the interviewees.
At the “heart” of each new energy vehicle charging system, and in the variable frequency drives of oil drilling at a depth of 12,000 meters, the “Chinese chips” born in Ningbo’s Qianwan New Area are quietly changing the rules of energy transmission.
They are “forged” by Pure Semiconductor – under the name of silicon carbide (SiC), initiating a revolution in power electronics.
Silicon carbide semiconductors are hailed as the “star of tomorrow” in the field of power electronics, possessing irreplaceable significant advantages in key areas such as high-temperature, high-frequency, and high-power applications in new energy vehicles, photovoltaic energy storage, and next-generation power grids.
At the end of 2019, Dr. Zhang Qingchun returned to China, leveraging solid technical foundations to guide Jita Semiconductor,being the first in the country to establish a standard mass production line for SiC wafer manufacturing, breaking through the “Ren and Du meridians”. This groundbreaking move opened the door to the rapid development of the domestic SiC industry.
Two years later, Zhang Qingchun founded Pure Semiconductor (Ningbo) Co., Ltd., specializing in the R&D and industrialization of SiC power devices, igniting the spark from the laboratory into a blazing industrial torch.
Within just one year of establishment, the first automotive-grade mass-produced SiC diodes and MOSFET products were launched, along with the first domestically produced electric vehicle main drive SiC MOSFET, both filling domestic gaps.In April of this year, the first main drive chip from the third-generation technology platform debuted, with a on-resistance as low as 2.1mΩ·cm², outperforming international counterparts.
“The rapid iteration of products is attributed to our entire team’s deep accumulation of SiC materials, devices, and applications. Last year, our mainstream SiC MOSFET product shipments exceeded 5 million units, and sales of devices surpassed 100 million yuan for the first time,” said Lei Guangyin, General Manager of the Automotive Division of Pure Semiconductor.
Researchers conducting experiments.
“A big river has water, and a small river is full,” innovation is not a solitary endeavor, and Zhang Qingchun understands this well. Pure Semiconductor, with a “chain leader” vision, has woven a network of symbiotic innovation –
Deep collaboration with material leaders like China Electronics Compound Semiconductor, ensuring stable supply of SiC epitaxial wafers to build a fortress of yield for high-performance chips, with both products selected for the Ningbo Quality Product Recommendation Directory last year;
Collaborating with foundry giants like Jita Semiconductor to bridge design to mass production;
Partnering with dozens of leading new energy enterprises such as Sungrow Power Supply, NIO Energy, and CATL…
The ecological attraction of “symbiosis and mutual prosperity” is accelerating resource aggregation in Ningbo. Within Ningbo’s Qianwan New Area, core enterprises like Pure Semiconductor, China Electronics Compound Semiconductor, and Qunxin Microelectronics resonate, with substrate, epitaxy, design, and packaging testing processes interconnected.
“We must not only persistently research and solve the fundamental scientific issues that restrict the performance and application of the next generation of SiC devices but also, from an industrial perspective, realistically clarify the opportunities and challenges faced by different development stages of SiC semiconductor technology and applications,” said Zhang Qingchun.
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Source: Yongpai
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