Renesas Electronics Shifts Focus to AI, Halts SiC Business
Japanese semiconductor giant Renesas Electronics has recently announced a major strategic adjustment. According to reports from Nikkei News and Nikkan Kogyo Shimbun, the company will terminate its mass production plans for silicon carbide (SiC) power semiconductors and fully transition to three core areas: edge AI, AIoT, and AI data centers. This transformation is accompanied by the launch of two significant new products: the “RA8P1” microcontroller (MCU) optimized for edge computing and a 650V gallium nitride (GaN) power semiconductor designed for high-performance computing.
Performance Leap in Edge AI Processors
The new “RA8P1” MCU features a groundbreaking design based on an ARM architecture core and TSMC’s 22nm ultra-low leakage (ULL) process. Compared to the previous generation 40nm products, its AI inference performance has achieved a leap forward, with processing speeds increased by over 30 times. This chip integrates two innovative modules: a high-durability MRAM memory capable of enduring millions of write cycles, and a dedicated neural network processing unit (NPU) with a computing capacity of 256 GOPS (256 billion operations per second). These features make it shine in the field of intelligent driving, particularly suitable for real-time applications with stringent requirements such as ADAS driver monitoring systems, high-frame-rate in-vehicle cameras, and multi-sensor fusion.
Cost Reduction and Efficiency Improvement with GaN Power Semiconductors
In the power management sector, Renesas has introduced a 650V GaN FET utilizing fourth-generation enhanced (Gen IV Plus) technology. Through process optimization, the new device achieves a dual 14% breakthrough—reducing chip area by 14% while lowering on-resistance by 14%. This not only enhances power density and energy efficiency but also reduces overall system costs by approximately 10%. This product is specifically optimized for high-voltage power modules in AI data centers and smart grid devices.
Strategic Transformation Roadmap
After acquiring the American company Transphorm in 2024, Renesas quickly completed the integration of GaN technology. Currently, its GaN devices are being produced on a 6-inch line in Fukushima, Japan, but a clear capacity upgrade plan has been established: by 2027, the company will fully switch to 8-inch wafer manufacturing and outsource production to Polar Semiconductor (PSL), a subsidiary of Sanan Optoelectronics in the United States, with plans to transition to 12-inch wafers in the future. The company has also confirmed that it will gradually exit the IGBT and SiC power semiconductor markets, focusing resources on developing MOSFET and GaN technologies, with an emphasis on capturing incremental markets such as AI servers.
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